PRESSURE EFFECTS ON ELECTRON CHARGE-DENSITIES AND LATTICE-DYNAMICS IN CSCL AND CSI

被引：8

作者：

PATTYN, H ^{[1
]}

ABDELMEGUID, MM ^{[1
]}

BUKSHPAN, S ^{[1
]}

MILANTS, K ^{[1
]}

VERHEYDEN, J ^{[1
]}

机构：

[1] SOREQ NUCL RES CTR,IL-70600 YAVNE,ISRAEL

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.51.10357

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of pressure on electron densities and lattice dynamics in CsCl and CsI has been investigated using the Cs133 high-pressure Mössbauer- effect technique. The analysis of the isomer-shift results and the corresponding s-electron density at the cesium nuclei allows one to evaluate the amount of 6s electrons residing on the cesium ion in both samples. The isomer-shift results reveal the important role played by the Cs 5p valence electron bands: the increasing overlap with the Cl 4p band and the I 5p band, respectively, accelerated by compression, causes a decrease in their shielding effect of the s electrons. This contribution is equivalent to 0.23 6s electrons at V/V0=0.85 for CsCl and to 0.24 at V/V0=0.78 for CsI. From the volume dependence of the recoilless fraction the behavior of the Grüneisen coefficient was deduced. The results for CsI confirm the similarity between the lattice dynamical properties of CsI and solid xenon under pressure. © 1995 The American Physical Society.

引用

页码：10357 / 10363

页数：7

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