SURFACTANT COVERAGE AND EPITAXY OF GE ON GA-TERMINATED SI(111)

被引：61
作者：
FALTA, J
COPEL, M
LEGOUES, FK
TROMP, RM
机构：
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 23期
关键词：
D O I：
10.1063/1.109157
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the role of surfactant coverage and bonding for growth of Ge on Si (111). At 470-degrees-C Ge grows on Si (111)-(7 X 7) in a Stranski-Krastanov fashion. Preadsorption of 1-ML Ga at 500-degrees-C forms a Ga:Si (111)-(6.3 X 6.3) structure and alters the Ge growth mode from three-dimensional (3D) islanding to continuous film formation. However, the epitaxial layer contains defects, caused by the presence of domain boundaries of both A- and B-type material. Growth properties depend strongly on the initial Ga coverage: if a ( square-root 3 X square-root 3) surface with 1/3-mL Ga is used, a modified Stranski-Krastanov growth mode is observed, with 3D islands of a uniform predominant thickness.
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收藏
页码：2962 / 2964
页数：3
相关论文
共 11 条
[1]   PROBING ATOMICALLY INHOMOGENEOUS SURFACES WITH TUNNELING MICROSCOPY [J].
BEDROSSIAN, P ;
MORTENSEN, K ;
CHEN, DM ;
GOLOVCHENKO, JA .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 48 (1-4) :296-305
[2]   STUDY OF THE GEOMETRIC STRUCTURE AND VIBRATIONAL AMPLITUDES AT THE SI(111)-(SQUARE-ROOT-3 X SQUARE-ROOT-3) R30-DEGREES-GA SURFACE [J].
CHESTER, M ;
GUSTAFSSON, T .
SURFACE SCIENCE, 1992, 264 (1-2) :33-44
[3]  
CHU WK, 1978, BACKSCATTERING SPECT, P45
[4]   SURFACTANTS IN EPITAXIAL-GROWTH [J].
COPEL, M ;
REUTER, MC ;
KAXIRAS, E ;
TROMP, RM .
PHYSICAL REVIEW LETTERS, 1989, 63 (06) :632-635
[5]   DEFECT SELF-ANNIHILATION IN SURFACTANT-MEDIATED EPITAXIAL-GROWTH [J].
HORNVONHOEGEN, M ;
LEGOUES, FK ;
COPEL, M ;
REUTER, MC ;
TROMP, RM .
PHYSICAL REVIEW LETTERS, 1991, 67 (09) :1130-1133
[6]   AN STM STUDY OF THE GALLIUM INDUCED SQUARE-ROOT-3-X-SQUARE-ROOT-3 RECONSTRUCTION OF SI(111) [J].
NOGAMI, J ;
PARK, SI ;
QUATE, CF .
SURFACE SCIENCE, 1988, 203 (1-2) :L631-L636
[7]   NEW GA-INDUCED SUPERSTRUCTURES ON SI(111) SURFACES [J].
OTSUKA, M ;
ICHIKAWA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (08) :1103-1104
[8]   ARSENIC AND GALLIUM ATOM LOCATION ON SILICON (111) [J].
PATEL, JR ;
ZEGENHAGEN, J ;
FREELAND, PE ;
HYBERTSEN, MS ;
GOLOVCHENKO, JA ;
CHEN, DM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :894-900
[9]   A NEW 2-DIMENSIONAL PARTICLE DETECTOR FOR A TOROIDAL ELECTROSTATIC ANALYZER [J].
TROMP, RM ;
COPEL, M ;
REUTER, MC ;
VONHOEGEN, MH ;
SPEIDELL, J ;
KOUDIJS, R .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1991, 62 (11) :2679-2683
[10]   ION BEAM CRYSTALLOGRAPHY OF SURFACES AND INTERFACES [J].
Van der Veen, J. F. .
SURFACE SCIENCE REPORTS, 1985, 5 (5-6) :199-287
12