HEAVY-ION SPUTTERING YIELD OF SILICON

被引：64

作者：

ANDERSEN, HH ^{[1
]}

BAY, HL ^{[1
]}

机构：

[1] UNIV AARHUS,INST PHYS,DK-8000 AARHUS,DENMARK

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 05期

关键词：

D O I：

10.1063/1.321889

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1919 / 1921

页数：3

共 19 条

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[2] DOSE DEPENDENCE OF 45 keV V + AND Bi + ION SPUTTERING YIELD OF COPPER. [J].

Andersen, Hans Henrik .

Radiation Effects, 1973, 19 (04) :257-261

[3]

Andersen H. H., 1973, Radiation Effects, V19, P139, DOI 10.1080/00337577308232233

[4]

ANDERSEN HC, TO BE PUBLISHED

[5] NONLINEAR EFFECTS IN HEAVY-ION SPUTTERING [J].

ANDERSEN, HH ;

BAY, HL .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) :953-954

[6]

ANDERSEN HH, UNPUBLISHED

[7]

ANDERSEN HH, 1972, RADIAT EFF, V13, P67

[8]

ANDERSEN HH, 1975, PHYSICS IONIZED GASE

[9] RANGE DISTRIBUTION OF IMPLANTED IONS IN SIO2, SI3N4, AND AL2O3 [J].

CHU, WK ;

CROWDER, BL ;

MAYER, JW ;

ZIEGLER, JF .

APPLIED PHYSICS LETTERS, 1973, 22 (10) :490-492

[10] SPUTTERING AND STRAIN OF SILICON BY ION IMPLANTATION [J].

EERNISSE, EP .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) :480-&

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