1ST OBSERVATION OF STRAINED SILOXANE BONDS ON SILICON-OXIDE THIN-FILMS

被引：54

作者：

CHIANG, CM ^{[1
]}

ZEGARSKI, BR ^{[1
]}

DUBOIS, LH ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF PHYSICAL CHEMISTRY | 1993年 / 97卷 / 27期

关键词：

D O I：

10.1021/j100129a004

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We provide the first experimental evidence that edge-shared tetrahedra ( > Si < o/o > Si < ) can exist on the surface of silicon oxide thin films. These sites are characterized by infrared active Si-O-Si bending modes at 888 and 908 cm-1 and by their high reactivity toward both water and triethylsilanol. They are formed by annealing at high temperature (greater-than-or-equal-to 1400 K) and not by the recombination of surface silanol groups. Our observations confirm recent theoretical predictions.

引用

页码：6948 / 6950

页数：3

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