1ST OBSERVATION OF STRAINED SILOXANE BONDS ON SILICON-OXIDE THIN-FILMS

被引：54

作者：

CHIANG, CM ^{[1
]}

ZEGARSKI, BR ^{[1
]}

DUBOIS, LH ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF PHYSICAL CHEMISTRY | 1993年 / 97卷 / 27期

关键词：

D O I：

10.1021/j100129a004

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We provide the first experimental evidence that edge-shared tetrahedra ( > Si < o/o > Si < ) can exist on the surface of silicon oxide thin films. These sites are characterized by infrared active Si-O-Si bending modes at 888 and 908 cm-1 and by their high reactivity toward both water and triethylsilanol. They are formed by annealing at high temperature (greater-than-or-equal-to 1400 K) and not by the recombination of surface silanol groups. Our observations confirm recent theoretical predictions.

引用

页码：6948 / 6950

页数：3

共 50 条

[21] LOW-LEVEL LEAKAGE CURRENTS IN THIN SILICON-OXIDE FILMS
DUMIN, DJ
COOPER, JR
MADDUX, JR
SCOTT, RS
WONG, DP
JOURNAL OF APPLIED PHYSICS, 1994, 76 (01) : 319 - 327
[22] ELECTRICAL-PROPERTIES OF SILICON-NITRIDE AND SILICON-OXIDE THIN-FILMS FORMED BY LOW-ENERGY ION-IMPLANTATION
FURUMURA, Y
NOUE, S
MAEDA, M
TAKAGI, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C80 - C80
[23] PROPERTIES OF VARIOUS SILICON OXIDE PHASES IN THIN-FILMS
RITTER, E
VAKUUM-TECHNIK, 1972, 21 (2-3): : 42 - +
[24] GROWTH OF DIAMOND THIN-FILMS ON SILICON AND TEM OBSERVATION OF THE INTERFACE
KOBAYASHI, K
KARASAWA, S
WATANABE, T
TOGASHI, F
JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 1211 - 1214
[25] OBSERVATION OF ELECTROMIGRATION IN HEAVILY DOPED POLYCRYSTALLINE SILICON THIN-FILMS
LLOYD, JR
POLCARI, MR
MACKENZIE, GA
APPLIED PHYSICS LETTERS, 1980, 36 (06) : 428 - 430
[26] IDENTIFICATION OF THE 1ST NUCLEATED PHASE IN THE INTERFACIAL REACTIONS OF ULTRAHIGH-VACUUM DEPOSITED TITANIUM THIN-FILMS ON SILICON
WANG, MH
CHEN, LJ
APPLIED PHYSICS LETTERS, 1991, 58 (05) : 463 - 465
[27] Effects of moisture on Fowler-Nordheim characterization of thin silicon-oxide films
Peterson, CA
Workman, RK
Sarid, D
Vermeire, B
Parks, HG
Adderton, D
Maivald, P
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1999, 17 (05): : 2753 - 2758
[28] SURFACE ELECTROMAGNETIC-WAVE PROPAGATION ON METAL WITH THIN SILICON-OXIDE FILMS
ZHIZHIN, GN
MOSKALEVA, MA
SHOMINA, EV
YAKOVLEV, VA
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 459 - 459
[29] X-RAY PHOTOELECTRON CHARACTERIZATION OF VERY THIN SILICON-OXIDE FILMS
HOLLINGER, G
JUGNET, Y
PERTOSA, P
PORTE, L
TRANMINHDUC
ANALUSIS, 1977, 5 (01) : 2 - 10
[30] Photochemistry of thin molecular films on silicon: Silicon-oxide deposition from polymerization of silsesquioxane.
Sharma, J
Berry, DH
Composto, RJ
Dai, HL
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2000, 219 : U515 - U515

← 1 2 3 4 5 →