MECHANISM OF SILICON FILM DEPOSITION IN THE RF PLASMA REDUCTION OF SILICON TETRACHLORIDE

被引：39
作者：
BRUNO, G
CAPEZZUTO, P
CICALA, G
CRAMAROSSA, F
机构：
来源：
PLASMA CHEMISTRY AND PLASMA PROCESSING | 1986年 / 6卷 / 02期
关键词：
D O I：
10.1007/BF00571271
中图分类号：
TQ [化学工业];
学科分类号：
0817 ;
摘要：
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页码：109 / 125
页数：17
相关论文
共 30 条
[1]   RADICAL MOLECULE AND ION-MOLECULE MECHANISMS IN THE POLYMERIZATION OF HYDROCARBONS AND CHLOROSILANES IN RF PLASMAS AT LOW-PRESSURES (BELOW 1.0 TORR) [J].
AVNI, R ;
CARMI, U ;
INSPEKTOR, A ;
ROSENTHAL, I .
THIN SOLID FILMS, 1984, 118 (02) :231-241
[2]  
BRODSKY MH, 1979, TOPICS APPLIED PHYSI, V36
[3]   DEPOSITION RATE AND STRUCTURAL-PROPERTIES OF MICROCRYSTALLINE GLOW-DISCHARGE SI-H,CL FILMS [J].
BRUNO, G ;
CAPEZZUTO, P ;
CRAMAROSSA, F .
THIN SOLID FILMS, 1983, 106 (03) :145-152
[4]   DOPING OF MICROCRYSTALLINE SI-H,CL FILMS IN RF GLOW-DISCHARGE [J].
BRUNO, G ;
CAPEZZUTO, P ;
CRAMAROSSA, F ;
BARBAROSSA, V ;
AUGELLI, V ;
MURRI, R .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :815-818
[5]   THE INFLUENCE OF ARGON ADDITION ON THE DEPOSITION AND PROPERTIES OF SI H, CL FILMS PREPARED IN A GLOW-DISCHARGE [J].
BRUNO, G ;
CAPEZZUTO, P ;
CICALA, G ;
CRAMAROSSA, F .
THIN SOLID FILMS, 1986, 135 (02) :245-250
[6]  
BRUNO G, 1985, THIN SOLID FILMS, V129, P127
[7]  
d'Agostino R., 1984, Plasma Chemistry and Plasma Processing, V4, P165, DOI 10.1007/BF00566839
[8]  
DAGOSTINO R, 1985, PURE APPL CHEM, V57, P7287
[9]  
Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]
[10]   CHARACTERIZATION AND LUMINESCENCE OF A-SI-H-CL FILMS [J].
FORTUNATO, G ;
EVANGELISTI, F ;
BRUNO, G ;
CAPEZZUTO, P ;
CRAMAROSSA, F ;
AUGELLI, V ;
MURRI, R .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1981, 46 (01) :95-104
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