SI(111)-SIH3 - SIMPLE NEW SURFACE PHASE

被引：151

作者：

PANDEY, KC ^{[1
]}

SAKURAI, T ^{[1
]}

HAGSTRUM, HD ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW LETTERS | 1975年 / 35卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.35.1728

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1728 / 1731

页数：4

共 13 条

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[2] STRUCTURE AND TRANSFORMATION CHARACTERISTICS OF IMPURITY STABILIZED PHASES ON SI(111) SURFACE [J].

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ROBERTSON, WD .

SURFACE SCIENCE, 1971, 24 (01) :173-+

[3] ENERGY-LEVEL SPECTRA OF ELECTRONS AT (111), (110), AND (100) SURFACES OF SILICON AND GERMANIUM BY ION-NEUTRALIZATION SPECTROSCOPY [J].

HAGSTRUM, HD ;

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PHYSICAL REVIEW B, 1973, 8 (04) :1580-1591

[4] HYDROGEN ADSORPTION AND SURFACE-STRUCTURES OF SILICON [J].

IBACH, H ;

ROWE, JE .

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[5] ELECTRON ORBITAL ENERGIES OF OXYGEN ADSORBED ON SILICON SURFACES AND OF SILICON DIOXIDE [J].

IBACH, H ;

ROWE, JE .

PHYSICAL REVIEW B, 1974, 10 (02) :710-718

[6] ELECTRONIC-TRANSITIONS OF OXYGEN ADSORBED ON CLEAN SILICON (111) AND (100) SURFACES [J].

IBACH, H ;

ROWE, JE .

PHYSICAL REVIEW B, 1974, 9 (04) :1951-1957

[7] STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES [J].

LANDER, JJ ;

GOBELL, GW ;

MORRISON, J .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2298-+

[8]

LUDEKE R, 1974, PHYS REV L, V34, P1170

[9]

PANDEY KC, TO BE PUBLISHED

[10]

PAULING L, 1960, NATURE CHEMICAL BOND, P130

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