AUGER-ELECTRON SPECTROSCOPY AND ELECTRON-ENERGY LOSS SPECTROSCOPY STUDIES OF THE FORMATION OF SILICON-NITRIDE BY IMPLANTING LOW-ENERGY NITROGEN-IONS INTO SILICON

被引：14

作者：

LIESKE, N ^{[1
]}

HEZEL, R ^{[1
]}

机构：

[1] UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSENSCH 6,D-8520 ERLANGEN,FED REP GER

来源：

THIN SOLID FILMS | 1981年 / 85卷 / 01期

关键词：

D O I：

10.1016/0040-6090(81)90049-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7 / 14

页数：8

共 17 条

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[3] SI(LVV) AUGER-SPECTRA OF AMORPHOUS SI-OXIDE, SI-NITRIDE, AND SI-OXINITRIDE [J].

HEZEL, R ;

LIESKE, N .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2566-2568

[4]

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[5] CHEMICAL-SHIFTS IN AUGER-ELECTRON SPECTRA FROM SILICON IN SILICON-NITRIDE [J].

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[6] THERMALLY GROWN SILICON-NITRIDE FILMS FOR HIGH-PERFORMANCE MNS DEVICES [J].

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APPLIED PHYSICS LETTERS, 1978, 32 (05) :330-331

[7] CORE AND VALENCE ELECTRON EXCITATIONS OF AMORPHOUS SILICON-OXIDE AND SILICON-NITRIDE STUDIED BY LOW-ENERGY ELECTRON LOSS SPECTROSCOPY [J].

LIESKE, N ;

HEZEL, R .

THIN SOLID FILMS, 1979, 61 (02) :217-228

[8] OXIDE FORMATION ON THE SILICON (111) SURFACE STUDIED BY AUGER-ELECTRON SPECTROSCOPY AND BY LOW-ENERGY ELECTRON LOSS SPECTROSCOPY [J].

LIESKE, N ;

HEZEL, R .

THIN SOLID FILMS, 1979, 61 (02) :197-202

[9]

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[10]

LIESKE N, 1979, THESIS U ERLANGEN NU

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