GIANT MAGNETORESISTANCE AND LOW SATURATION FIELDS IN CO-FE/CU MULTILAYERS

被引：35

作者：

INOMATA, K

SAITO, Y

机构：

[1] Toshiba Corporation, Research and Development Center, Kawasaki

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1993年 / 126卷 / 1-3期

关键词：

D O I：

10.1016/0304-8853(93)90645-I

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the magnetoresistive properties of CoxFe1-x/Cu multilayers with different CoxFe1-x and Cu thicknesses, prepared on MgO(110) substrates using ion beam sputtering. The MR ratio for Co9Fe/Cu multilayers was significantly larger than that for Co/Cu multilayers. The MR ratio oscillates for Cu layer thickness with a 12 angstrom period for all the multilayers investigated. The Cu intervening magnetic layer coupling depends on the Co concentration and has a broad maximum around x = 0.8. The uniaxial anisotropy induced by epitaxial growth in the multilayers on MgO(110) substrates ted to a low saturation field and quite a small field change DELTAH needed for giant magnetoresistance. An MR ratio of 16% was attained for DELTAH = 50 Oe at room temperature.

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页码：425 / 429

页数：5

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