MICROCRACKS IN A GAAS/SI WAFER STUDIED BY X-RAY-DIFFRACTION

被引：2

作者：

GAO, DC ^{[1
]}

STEVENSON, AW ^{[1
]}

WILKINS, SW ^{[1
]}

PAIN, GN ^{[1
]}

机构：

[1] TELECOM AUSTRALIA,RES LABS,CLAYTON,VIC 3168,AUSTRALIA

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 129卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(93)90442-Y

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

X-ray diffraction has been used to study a GaAs/Si wafer containing microcracks. Two arrays of microcracks running in the [011] and [011BAR] directions have been identified. The FWHM of the rocking curves and the curvature of the wafer show a marked dependence on the azimuthal orientation of the sample, due apparently to the anisotropic distribution of microcracks. A discussion is given of the causes of the observed reversal of diffraction contrast in the images of microcracks in the GaAs epilayer as compared with the Si substrate. The ''white-black-white'' contrast in images of microcracks and its variation due to the effective misorientation of the lattice was also observed and is discussed in detail. Mosaic blocks existing in the epilayer were observed by Lang topography.

引用

页码：134 / 142

页数：9

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