ELECTRONIC-STRUCTURE OF AMORPHOUS SI3N4 IN THE CLUSTER-BETHE-LATTICE APPROXIMATION

被引：17
作者：
FERREIRA, EC
DASILVA, CETG
机构：
[1] ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75231 PARIS 05,FRANCE
[2] UNIV ESTADUAL CAMPINAS,INST FIS,BR-13100 CAMPINAS,SP,BRAZIL
来源：
PHYSICAL REVIEW B | 1985年 / 32卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.32.8332
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：8332 / 8337
页数：6
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