RAPID THERMAL ANNEALING OF TI SCHOTTKY CONTACTS TO N-GAAS

被引：0

作者：

PRASAD, K

FARAONE, L

NASSIBIAN, AG

机构：

[1] Department of Electrical and Elecronic Engineering, The University of Western Australia, Nedlands, 6009, W.A.

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1991年 / 2卷 / 04期

关键词：

D O I：

10.1007/BF00702927

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ti Schottky contacts were formed on n-GaAs surfaces and were subjected to rapid thermal annealing (RTA) at various temperatures. Low temperature RTA (< 500-degrees-C) results in a reduction in the diode leakage currents and increase in the barrier voltage. High temperature RTA (> 500-degrees-C) results in progressive degradation of the diode parameters. The improvement in diode parameters is expected to be due to better adhesion of Ti Schottky contact resulting in a more intimate contact of the Schottky metal to the GaAs substrate.

引用

页码：227 / 229

页数：3

共 10 条

[1]

Hart M.J., Evans A.G.R., Semicond. Sci. & Technology, 3, (1988)

[2]

Gill S.S., Dawsey M.R., Thin Solid Films, 167, (1988)

[3]

Yasuami S., Saito Y., Hojo A., Au–Ge Ohmic Contact to n-GaAs by IR Lamp Alloying, Japanese Journal of Applied Physics, 23, (1984)

[4]

Sze S.M., Physics of Semiconductor Devices, (1981)

[5]

Crowell C.R., Sze S.M., Solid State Electronics, 9, (1966)

[6]

Press W.H., Flannery B.P., Teukolsky S.A., Vetterling W.T., Numerical Recipes, The Art of Scientific Computing, (1986)

[7]

Gazecki J., Sai-Halsaz G.A., Elliman R.G., Kellock A., Nyberg G.L., Willia J.S., Improvement in the adhesion of thin films to semiconductors and oxides using electron and photon irradiation, Applications of Surface Science, 22-23, (1985)

[8]

Fahrenbruch A.L., Bube R.H., Fundamentals of Solar Cells: Photovoltaic Solar Energy Conversion, (1973)

[9]

Prasad K., Faraone L., Nassibian A.G., Semicond. Sci. & Technology, 4, (1989)

[10]

Faraone L., Prasad K., Nassibian A.G., Semicond. Sci. & Technology, 5, (1990)

← 1 →