ETCHED MIRROR AND GROOVE-COUPLED GALNASP/INP LASER DEVICES FOR INTEGRATED-OPTICS

被引：87

作者：

COLDREN, LA ^{[1
]}

FURUYA, K ^{[1
]}

MILLER, BI ^{[1
]}

RENTSCHLER, JA ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT PHYS ELECTR,TOKYO 152,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1982年 / 18卷 / 10期

关键词：

D O I：

10.1109/JQE.1982.1071404

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1679 / 1688

页数：10

共 40 条

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[7] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET [J].

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[8] MONOLITHIC 2-SECTION GAINASP-INP ACTIVE-OPTICAL-RESONATOR DEVICES FORMED BY REACTIVE ION ETCHING [J].

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APPLIED PHYSICS LETTERS, 1981, 38 (05) :315-317

[9] DIRECTIONAL REACTIVE-ION-ETCHING OF INP WITH CL-2 CONTAINING GASES [J].

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[10]

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