EFFECT OF DISLOCATIONS ON SHEET CARRIER CONCENTRATION OF SI-IMPLANTED, SEMI-INSULATING, LIQUID-ENCAPSULATED CZOCHRALSKI GROWN GAAS

被引：28
作者：
HYUGA, F
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1985年 / 24卷 / 02期
关键词：
D O I：
10.1143/JJAP.24.L160
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：L160 / L162
页数：3
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