MINIMIZATION OF PARASITICS IN INTEGRATED CIRCUITS BY DIELECTRIC ISOLATION

被引：11

作者：

MAXWELL, DA

BEESON, RH

ALLISON, DF

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1965.15446

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：20 / &

共 6 条

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[2] CASTRO PS, 1960, P NATL ELECTRONICS C
[3] DICKEN H, 1963, INTERNAT SOLIDSTATE
[4] STRUCTURE-DETERMINED GAIN-BAND PRODUCT OF JUNCTION TRIODE TRANSISTORS
EARLY, JM
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (12): : 1924 - 1927
[5] FREQUENCY VARIATIONS OF JUNCTION-TRANSISTOR PARAMETERS
PRITCHARD, RL
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (05): : 786 - 799
[6] WEISSENSTERN M, 1963, ELECTRONIC DESIGN