TRAP CREATION IN SILICON DIOXIDE PRODUCED BY HOT-ELECTRONS

被引：507
作者：
DIMARIA, DJ
STASIAK, JW
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期
关键词：
D O I：
10.1063/1.342824
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2342 / 2356
页数：15
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