ELECTRICAL-CONDUCTION AND BREAKDOWN IN OXIDES OF POLYCRYSTALLINE SILICON AND THEIR CORRELATION WITH INTERFACE TEXTURE

被引：68

作者：

HEIMANN, PA

MURARKA, SP

SHENG, TT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 09期

关键词：

D O I：

10.1063/1.331540

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6240 / 6245

页数：6

共 18 条

[1]

ABBAS SA, 1976, ECS EXT ABSTR, V762, P842

[2] EVIDENCE FOR SURFACE ASPERITY MECHANISM OF CONDUCTIVITY IN OXIDE GROWN ON POLYCRYSTALLINE SILICON [J].

ANDERSON, RM ;

KERR, DR .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) :4834-4836

[3] INTERFACE EFFECTS AND HIGH CONDUCTIVITY IN OXIDES GROWN FROM POLYCRYSTALLINE SILICON [J].

DIMARIA, DJ ;

KERR, DR .

APPLIED PHYSICS LETTERS, 1975, 27 (09) :505-507

[4] CONDUCTION AND TRAPPING OF ELECTRONS IN HIGHLY STRESSED ULTRATHIN FILMS OF THERMAL SIO2 [J].

HARARI, E .

APPLIED PHYSICS LETTERS, 1977, 30 (11) :601-603

[5]

HEIMANN P, UNPUB

[6] CURRENT-FIELD CHARACTERISTICS OF OXIDES GROWN FROM POLYCRYSTALLINE SILICON [J].

HU, C ;

SHUM, Y ;

KLEIN, T ;

LUCERO, E .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :189-191

[7] EXPERIMENTAL-OBSERVATIONS ON CONDUCTION THROUGH POLYSILICON OXIDE [J].

HUFF, HR ;

HALVORSON, RD ;

CHIU, TL ;

GUTERMAN, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (11) :2482-2488

[8] SILICON OXIDATION STUDIES - MORPHOLOGICAL ASPECTS OF THE OXIDATION OF POLYCRYSTALLINE SILICON [J].

IRENE, EA ;

TIERNEY, E ;

DONG, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) :705-713

[9] THERMAL OXIDATION OF POLYCRYSTALLINE SILICON FILMS [J].

KAMINS, TI ;

MACKENNA, EL .

METALLURGICAL TRANSACTIONS, 1971, 2 (08) :2292-&

[10]

KERR DR, 1976, ECS EXT ABSTR, V762, P839

← 1 2 →