HALL EFFECT MEASUREMENT OF RADIATION DAMAGE + ANNEALING IN SI

被引：31

作者：

TANAKA, T

INUISHI, Y

机构：

来源：

关键词：

D O I：

10.1143/JPSJ.19.167

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：167 / &

共 9 条

[1]

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[2]

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[3]

NAKANO T, TO BE PUBLISHED

[4]

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[5]

VAVILOV VS, 1963, J PHYS SOC JAPAN S3, V18, P236

[6] SPIN RESONANCE IN ELECTRON IRRADIATED SILICON [J].

WATKINS, GD ;

CORBETT, JW ;

WALKER, RM .

WATKINS, GD ;

CORBETT, JW .

PHYSICAL REVIEW, 1961, 121 (04) :1001-&

[8] ELECTRON-BOMBARDMENT DAMAGE IN OXYGEN-FREE SILICON [J].

WERTHEIM, GK ;

BUCHANAN, DNE .

[9]

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