HYDROGEN PASSIVATION OF THE OXYGEN-RELATED THERMAL-DONOR DEFECT IN SILICON

被引:52
|
作者
JOHNSON, NM [1 ]
HAHN, SK [1 ]
机构
[1] SILTEC CORP,MT VIEW,CA 94043
关键词
D O I
10.1063/1.96697
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:709 / 711
页数:3
相关论文
共 50 条
  • [1] OXYGEN INCORPORATION IN THERMAL-DONOR CENTERS IN SILICON
    GREGORKIEWICZ, T
    VANWEZEP, DA
    BEKMAN, HHPT
    AMMERLAAN, CAJ
    PHYSICAL REVIEW LETTERS, 1987, 59 (15) : 1702 - 1705
  • [2] OXYGEN-RELATED DONOR STATES IN SILICON
    KIMERLING, LC
    BENTON, JL
    APPLIED PHYSICS LETTERS, 1981, 39 (05) : 410 - 412
  • [3] Effect of hydrogen on oxygen-related defect reactions in silicon at elevated temperatures
    Markevich, VP
    Medvedeva, IF
    Murin, LI
    EARLY STAGES OF OXYGEN PRECIPITATION IN SILICON, 1996, 17 : 103 - 122
  • [4] THERMAL DONORS AND OXYGEN-RELATED COMPLEXES IN SILICON
    GREGORKIEWICZ, T
    BEKMAN, HHPT
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 4 (1-4): : 291 - 297
  • [5] CENTERS OF THERMAL-DONOR NUCLEATION IN SILICON
    MARKEVICH, VP
    MURIN, LI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (02): : 158 - 161
  • [6] Oxygen-Related Thermal Donor Formation in Dopant-Rich Compensated Czochralski Silicon
    Tanay, Florent
    Dubois, Sebastien
    Veirman, Jordi
    Enjalbert, Nicolas
    Stendera, Julie
    Perichaud, Isabelle
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (05) : 1241 - 1245
  • [7] Passivation of oxygen-related donors in microcrystalline silicon by low temperature deposition
    Nasuno, Y
    Kondo, M
    Matsuda, A
    APPLIED PHYSICS LETTERS, 2001, 78 (16) : 2330 - 2332
  • [8] PRESSURE-DEPENDENCE OF OXYGEN-RELATED DEFECT LEVELS IN SILICON
    KELLER, WW
    JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3471 - 3477
  • [9] Oxygen-related defect centers in 4H silicon carbide
    Dalibor, T
    Pensl, G
    Yamamoto, T
    Kimoto, T
    Matsunami, H
    Sridhara, SG
    Nizhner, DG
    Devaty, RP
    Choyke, WJ
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 553 - 556
  • [10] INFLUENCE OF CARBON ON THERMAL-DONOR FORMATION AND OXYGEN PRECIPITATION IN DISLOCATION-FREE SILICON
    BABITSKII, YM
    GRINSHTEIN, PM
    ILIN, MA
    MILVIDSKII, MG
    ORLOVA, EV
    RYTOVA, NS
    INORGANIC MATERIALS, 1985, 21 (05) : 645 - 649