AN APPROACH TO DETERMINE THE SMALL-SIGNAL EQUIVALENT-CIRCUIT OF SUB-MU-M GAAS-MESFETS INCLUDING EFFECTS OF NONSTATIONARY ELECTRON DYNAMICS

被引：2

作者：

FENG, YK

机构：

[1] NAMO HiTek GmbH, W-2100 Hamburg 90

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 03期

关键词：

D O I：

10.1016/0038-1101(93)90100-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An approach including the effects of nonstationary electron dynamics is used to derive a small-signal equivalent circuit model useful for the evaluation of GaAs device structures. The calculated results show that (1) the nonstationary electron transport decreases not only the active channel resistance but also both the feedback resistance and the output impedance, so that instability effects are enhanced and the maximum stable gain is decreased; and that (2) the high field domain plays a major role for small-signal properties of sub-mum GaAs MESFETs

引用

页码：443 / 453

页数：11

共 6 条

[1] A GAAS-MESFET SMALL-SIGNAL EQUIVALENT-CIRCUIT INCLUDING TRANSMISSION-LINE EFFECTS
FJELDLY, TA
PAULSEN, A
JENSEN, O
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) : 1557 - 1563
[2] A novel approach for determining the GaAs MESFET small-signal equivalent-circuit elements
Ooi, BL
Leong, MS
Kooi, PS
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1997, 45 (12) : 2084 - 2088
[3] Novel approach for determining the GaAs MESFET small-signal equivalent-circuit elements
Natl Univ of Singapore, Singapore, Singapore
IEEE Trans Microwave Theory Tech, 12 pt 1 (2084-2088):
[4] An improved approach for small-signal equivalent-circuit parameter determination of InGaP/GaAs HBT
Chen, HY
Chen, KM
Huang, GW
Chang, CY
Huang, TY
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2005, 44 (05) : 456 - 460
[5] MODELING OF GUNN DOMAIN EFFECTS IN THE OUTPUT CONDUCTANCE OF THE HIGH-FREQUENCY SMALL-SIGNAL GAAS-MESFET EQUIVALENT-CIRCUIT
MAGERKO, MA
CHANG, K
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1992, 5 (14) : 748 - 752
[6] A new extraction technique for the complete small-signal equivalent-circuit model of InGaP/GaAs HBT including base contact impedance and AC current crowding effect
Tang, Wen-Bin
Wang, Che-Ming
Hsin, Yue-Ming
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2006, 54 (10) : 3641 - 3647

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