SURFACE AND INTERFACE ANALYSIS OF GAAS-OXYFLUORIDES

被引：1

作者：

IRELAND, PJ

JAMJOUM, O

KAZMERSKI, LL

AHRENKIEL, RK

RUSSELL, PE

STANCHINA, W

WAGER, JF

机构：

[1] UNIV NOTRE DAME,NOTRE DAME,IN 46556

[2] HUGHES RES LABS,MALIBU,CA 90265

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.572202

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：653 / 656

页数：4

共 19 条

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[2] BERTRAND PA, UNPUB THIN SOLID FIL
[3] Carlson T. A., 1975, PHOTOELECTRON AUGER
[4] ANODIC OXIDE ON GAAS - QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS
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[5] APPLICATION OF SELECTIVE CHEMICAL-REACTION CONCEPT FOR CONTROLLING THE PROPERTIES OF OXIDES ON GAAS
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[6] NEW METHOD OF FABRICATING GALLIUM-ARSENIDE MOS DEVICES
CHANG, RPH
COLEMAN, JJ
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[7] EFFECT OF INTERFACE ARSENIC DOMAINS ON ELECTRICAL-PROPERTIES OF GAAS MOS STRUCTURES
CHANG, RPH
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CHANG, CC
COLEMAN, JJ
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (04) : 341 - 342
[8] DETECTION OF EXCESS CRYSTALLINE AS AND SB IN III-V OXIDE INTERFACES BY RAMAN-SCATTERING
FARROW, RL
CHANG, RK
MROCZKOWSKI, S
POLLAK, FH
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 768 - 770
[9] ANODIC OXIDE-GAAS AND INP INTERFACE FORMATION
GEIB, KM
WILMSEN, CW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 952 - 957
[10] NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES
HASEGAWA, H
FORWARD, KE
HARTNAGEL, HL
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (10) : 567 - 569

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