THE OXIDATION-INHIBITION IN NITROGEN-IMPLANTED SILICON

被引：37

作者：

JOSQUIN, WJMJ

TAMMINGA, Y

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 08期

关键词：

D O I：

10.1149/1.2124298

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1803 / 1811

页数：9

共 15 条

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