ELECTRON AND NUCLEAR SPIN RESONANCE IN N-TYPE SILICON CARBIDE

被引：31
|
作者：
HARDEMAN, GE
机构：
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1963年 / 24卷 / 10期
关键词：
D O I：
10.1016/0022-3697(63)90241-5
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：1223 / &
相关论文
共 50 条
  • [41] Electrical transport in n-type 4H silicon carbide
    Pernot, J
    Zawadzki, W
    Contreras, S
    Robert, JL
    Neyret, E
    Di Cioccio, L
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (04) : 1869 - 1878
  • [42] ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF HEAT-TREATMENT CENTERS IN N-TYPE SILICON
    BEKMAN, HHPT
    GREGORKIEWICZ, T
    VANWEZEP, DA
    AMMERLAAN, CAJ
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) : 4404 - 4405
  • [43] SPIN-LATTICE RELAXATION IN COMPENSATED N-TYPE SILICON
    IGO, T
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (05) : 874 - &
  • [44] IMPURITY-ASSOCIATED MAGNETOPHONON RESONANCE IN N-TYPE SILICON
    PORTAL, JC
    PERRIER, P
    HOULBERT, C
    ASKENAZY, S
    NICHOLAS, RJ
    STRADLING, RA
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (23): : 5121 - 5143
  • [45] PREPARATION OF UNIFORM RESISTIVITY N-TYPE SILICON BY NUCLEAR TRANSMUTATION
    TANENBAUM, M
    MILLS, AD
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (02) : 171 - 176
  • [46] Influence of n-type doping on electron spin dephasing in CdTe
    Sprinzl, D.
    Horodyska, P.
    Tesarova, N.
    Rozkotova, E.
    Belas, E.
    Grill, R.
    Maly, P.
    Nemec, P.
    PHYSICAL REVIEW B, 2010, 82 (15)
  • [47] Electron spin relaxation in n-type InAs quantum wires
    Lue, C.
    Schneider, H. C.
    Wu, M. W.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (07)
  • [48] Effective mass donors in silicon carbide -: a study with electron nuclear double resonance
    Greulich-Weber, S
    März, M
    Spaeth, JM
    PHYSICA B-CONDENSED MATTER, 1999, 273-4 : 659 - 662
  • [49] Effective mass donors in silicon carbide - a study with electron nuclear double resonance
    Greulich-Weber, S.
    März, M.
    Spaeth, J.-M.
    Physica B: Condensed Matter, 1999, 273 : 659 - 662
  • [50] Electron Mobility in Enhanced N-type Silicon Nanowire MOSFET
    Chen, Jie
    Guo, Tao
    Guo, Hang
    2009 4TH IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, VOLS 1 AND 2, 2009, : 1112 - +
12345