THE EFFECTS OF N+ DOSE IN IMPLANTATION INTO 6H-SIC EPILAYERS

被引：75

作者：

KIMOTO, T ^{[1
]}

ITOH, A ^{[1
]}

MATSUNAMI, H ^{[1
]}

NAKATA, T ^{[1
]}

WATANABE, M ^{[1
]}

机构：

[1] ION ENGN RES INST CORP,HIRAKATA,OSAKA 57301,JAPAN

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 04期

关键词：

ELECTRICAL ACTIVATION; IMPLANT DOSE; ION IMPLANTATION; RAMAN SCATTERING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE;

D O I：

10.1007/BF02659681

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ion implantation of nitrogen (N) into p-type 6H-SiC {0001} epilayers was investigated as a function of implant dose. Lattice damage induced by implantation was characterized by Rutherford backscattering spectroscopy and Raman scattering. The damage severely increased when the implant dose exceeds 1 x 10(15) cm(-2), and amorphous layers were formed at doses higher than 4 x 10(15) cm(-2). By high-temperature annealing at 1500 degrees C, relatively high electrical activation ratios (similar to 50%) can be obtained in the case of low-dose implantation (<1 x 10(15) cm(-2)). However, the electrical activation showed sharp decrease with increasing implant dose, which may be caused by the residual damage in implanted layers.

引用

页码：235 / 240

页数：6

共 24 条

[1]

Bohn H. G., 1987, Journal of Materials Research, V2, P107, DOI 10.1557/JMR.1987.0107

[2] SILICON-CARBIDE UV PHOTODIODES [J].

BROWN, DM ;

DOWNEY, ET ;

GHEZZO, M ;

KRETCHMER, JW ;

SAIA, RJ ;

LIU, YS ;

EDMOND, JA ;

GATI, G ;

PIMBLEY, JM ;

SCHNEIDER, WE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (02) :325-333

[3] ELECTRICAL-PROPERTIES OF ION-IMPLANTED P-N-JUNCTION DIODES IN BETA-SIC [J].

EDMOND, JA ;

DAS, K ;

DAVIS, RF .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) :922-929

[4] RAMAN SCATTERING IN 6H SIC [J].

FELDMAN, DW ;

PARKER, JH ;

CHOYKE, WJ ;

PATRICK, L .

PHYSICAL REVIEW, 1968, 170 (03) :698-&

[5]

GHEZZO M, 1992, IEEE ELECTRON DEVICE, V12, P639

[6]

HOGBOOD HM, 1994, J CRYST GROWTH, V137, P181

[7] CHEMICAL VAPOR-DEPOSITION AND CHARACTERIZATION OF 6H-SIC THIN-FILMS ON OFF-AXIS 6H-SIC SUBSTRATES [J].

KONG, HS ;

GLASS, JT ;

DAVIS, RF .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (05) :2672-2679

[8]

KROKO LT, 1966, SOLID STATE ELECT, V9, P1129

[9]

Kuroda N., 1987, 19 C SOL STAT DEV MA, P227

[10]

MARSH OJ, 1974, SILICON CARBIDE 1973, P471

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