SINGLE-ELECTRON CHARGING AND PERIODIC CONDUCTANCE RESONANCES IN GAAS NANOSTRUCTURES

被引：530

作者：

MEIRAV, U

KASTNER, MA

WIND, SJ

机构：

[1] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.65.771

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Narrow channels interrupted by two controlled potential barriers and having a tunable electron density were made in GaAs, and their conductance was measured at low temperatures. Reproducible and accurately periodic oscillations of the conductance with changing density are found to correspond to the sequential addition of single electrons to the segment of the channel between the barriers. Detailed examination of the line shape of the conductance versus density provides a new insight into the transport mechanism. © 1990 The American Physical Society.

引用

页码：771 / 774

页数：4

共 25 条

[11]

LANDAUER R, 1985, SPRINGER SERIES SOLI, V61, P38

[12] TUNNELING OF SOLITONS AND CHARGE-DENSITY WAVES THROUGH IMPURITIES [J].