TEMPORAL CHANGES IN REFLECTIVITY OF CRYSTALLINE SILICON IN PICOSECOND LASER-INDUCED MELTING

被引:2
|
作者
KANEMITSU, Y [1 ]
KURODA, H [1 ]
SHIONOYA, S [1 ]
机构
[1] NATL LAB HIGH ENERGY PHYS,OHO,IBARAKI 305,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 07期
关键词
D O I
10.1143/JJAP.23.940
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:940 / 940
页数:1
相关论文
共 50 条
  • [1] Liquid phase reflectivity under conditions of laser-induced silicon melting
    G. D. Ivlev
    E. I. Gatskevich
    Semiconductors, 2000, 34 : 759 - 762
  • [2] Liquid phase reflectivity under conditions of laser-induced silicon melting
    Ivlev, GD
    Gatskevich, EI
    SEMICONDUCTORS, 2000, 34 (07) : 759 - 762
  • [3] Picosecond laser-induced periodic surface structures (LIPSS) on crystalline silicon
    Gao, Yu-Fan
    Yu, Cai-Yun
    Han, Bing
    Ehrhardt, Martin
    Lorenz, Pierre
    Xu, Ling-Fei
    Zhu, Ri-Hong
    SURFACES AND INTERFACES, 2020, 19
  • [4] Influence of laser power variation on laser-induced changes of crystalline silicon
    Yang C.
    Mei X.
    Wang W.
    Tian Y.
    Zhang D.
    Cui L.
    Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2016, 45 (01):
  • [5] Laser-induced melting of porous silicon
    Timoshenko, VY
    Dittrich, T
    Sieber, I
    Rappich, J
    Kamenev, BV
    Kashkarov, PK
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2000, 182 (01): : 325 - 330
  • [6] Laser-induced melting of porous silicon
    Timoshenko, V.Yu.
    Dittrich, Th.
    Sieber, I.
    Rappich, J.
    Kamenev, B.V.
    Kashkarov, P.K.
    Physica Status Solidi (A) Applied Research, 2000, 182 (01): : 325 - 330
  • [7] PICOSECOND LASER-INDUCED MELTING AND RESOLIDIFICATION MORPHOLOGY ON SI
    LIU, PL
    YEN, R
    BLOEMBERGEN, N
    HODGSON, RT
    APPLIED PHYSICS LETTERS, 1979, 34 (12) : 864 - 866
  • [8] Rapid, deep dopant diffusion in crystalline silicon by laser-induced surface melting
    Zhou, Zibo
    Perez-Wurfl, Ivan
    Simonds, Brian J.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 86 : 8 - 17
  • [9] Time-resolved temperature and reflectivity measurements at the nanosecond laser-induced melting and crystallization of silicon
    Ivlev, GD
    Gatskevich, EI
    Sharaev, DN
    LASER-ASSISTED MICROTECHNOLOGY 2000, 2001, 4157 : 78 - 81
  • [10] Comparative experimental study of laser-induced transitions in crystalline silicon by femtosecond, picosecond, and millisecond laser ablation
    Yang, Chengjuan
    Mei, Xuesong
    Wang, Wenjun
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2014, 169 (03): : 194 - 203