PHOTO-LUMINESCENCE OF SHALLOW ACCEPTORS IN AL0.28GA0.72AS

被引:38
作者
BALLINGALL, JM [1 ]
COLLINS, DM [1 ]
机构
[1] HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
关键词
D O I
10.1063/1.331708
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:341 / 345
页数:5
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共 28 条
[11]   INFRARED STUDIES OF ACCEPTOR STATES IN EPITAXIAL FILMS OF GAAS [J].
KIRKMAN, RF ;
STRADLING, RA .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (16) :L324-L328
[12]  
KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927
[13]   INTERPRETATION OF ACCEPTOR SPECTRA IN SEMICONDUCTORS [J].
LIPARI, NO ;
BALDERESCHI, A .
SOLID STATE COMMUNICATIONS, 1978, 25 (09) :665-668
[14]  
LIPARI NO, COMMUNICATION
[16]   COMPOSITION-RATIO DEPENDENCE OF FORMATION OF BOUND-STATES IN NITROGEN-IMPLANTED ALXGA1-XAS [J].
MAKITA, Y ;
LJUIN, H ;
GONDA, S .
APPLIED PHYSICS LETTERS, 1976, 28 (05) :287-289
[17]   ACCEPTOR ENERGY-LEVEL FOR ZN IN GA1-XALXAS [J].
MASU, K ;
KONAGAI, M ;
TAKAHASHI, K .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :1060-1064
[18]   PHOTOLUMINESCENCE OF ALXGA1-XAS [J].
SHAH, J ;
DIGIOVANNI, AE ;
MILLER, BI .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3436-+
[19]   MAGNETOSPECTROSCOPY OF SHALLOW DONORS IN GAAS [J].
STILLMAN, GE ;
WOLFE, CM ;
DIMMOCK, JO .
SOLID STATE COMMUNICATIONS, 1969, 7 (13) :921-&
[20]   PHOTO-LUMINESCENCE OF SHALLOW ACCEPTORS IN EPITAXIAL ALXGA1-XAS [J].
STRINGFELLOW, GB ;
LINNEBACH, R .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2212-2217