PHOTO-LUMINESCENCE OF SHALLOW ACCEPTORS IN AL0.28GA0.72AS

被引：38

作者：

BALLINGALL, JM ^{[1
]}

COLLINS, DM ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 01期

关键词：

D O I：

10.1063/1.331708

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：341 / 345

页数：5

共 28 条

[1]

ASHEN DJ, 1975, J PHYS CHEM SOLIDS, V36, P104

[2] SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS [J].

BALDERESCHI, A ;

LIPARI, NO .

PHYSICAL REVIEW B, 1973, 8 (06) :2697-2709

[3] BOUND-EXCITON FREE-EXCITON BAND-ACCEPTOR DONOR-ACCEPTOR AND AUGER RECOMBINATION IN GAAS [J].

BOGARDUS, EH ;

BEBB, HB .

PHYSICAL REVIEW, 1968, 176 (03) :993-&

[4] LOW-TEMPERATURE PHOTO-LUMINESCENCE OF LIGHTLY SI-DOPED AND UNDOPED MBE GAAS [J].

BRIONES, F ;

COLLINS, DM .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) :847-866

[5] INFLUENCE OF GROWTH-CONDITIONS ON THE THRESHOLD CURRENT-DENSITY OF DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

CASEY, HC ;

RADICE, C ;

FOY, PW .

ELECTRONICS LETTERS, 1980, 16 (02) :72-74

[6]

COLLINS D, UNPUB, P12707

[7] RADIATIVE LIFETIMES OF DONOR-ACCEPTOR PAIRS IN P-TYPE GALLIUM ARSENIDE [J].

DINGLE, R .

PHYSICAL REVIEW, 1969, 184 (03) :788-&

[8]

DINGLE R, 1976, I PHYS C SER A, V33, P210

[9] SCREENING AND STARK EFFECTS DUE TO IMPURITIES ON EXCITONS IN SEMICONDUCTORS [J].

HANAMURA, E .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1970, 28 (01) :120-&

[10]

IMENKOV AN, 1975, SOV PHYS SEMICOND+, V8, P947

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