THERMAL SIO2-FILMS ON N+ POLYCRYSTALLINE SILICON - ELECTRICAL-CONDUCTION AND BREAKDOWN

被引：48

作者：

FARAONE, L ^{[1
]}

机构：

[1] RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 11期

关键词：

D O I：

10.1109/T-ED.1986.22741

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1785 / 1794

页数：10

共 27 条

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[2]

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[6]

DUFFY MT, 1983, RCA REV, V44, P313

[7] SURFACE-ROUGHNESS AND ELECTRICAL-CONDUCTION OF OXIDE POLYSILICON INTERFACES [J].

FARAONE, L ;

HARBEKE, G .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (07) :1410-1413

[8] CHARACTERIZATION OF THERMALLY OXIDIZED N+ POLYCRYSTALLINE SILICON [J].

FARAONE, L ;

VIBRONEK, RD ;

MCGINN, JT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) :577-583

[9]

Faraone L., 1986, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 85, P151

[10]

Faraone L., 1986, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 85, P111

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