FIELD-EFFECT IN LARGE GRAIN POLYCRYSTALLINE SILICON

被引：35

作者：

COLINGE, JP ^{[1
]}

MOREL, H ^{[1
]}

CHANTE, JP ^{[1
]}

机构：

[1] ECOLE CENT LYON, F-69130 ECULLY, FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 03期

关键词：

D O I：

10.1109/T-ED.1983.21099

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：197 / 201

页数：5

共 13 条

[1] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS
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[2] GRAIN-SIZE AND RESISTIVITY OF LPCVD POLYCRYSTALLINE SILICON FILMS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) : 2009 - 2014
[3] USE OF SELECTIVE ANNEALING FOR GROWING VERY LARGE GRAIN SILICON ON INSULATOR FILMS
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DEMOULIN, E
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AUVERT, G
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 346 - 347
[4] STACKED TRANSISTORS CMOS (ST-MOS), AN NMOS TECHNOLOGY MODIFIED TO CMOS
COLINGE, JP
DEMOULIN, E
LOBET, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 585 - 589
[5] COLINGE JP, 1982, SPR P ECS M MONTR, P238
[6] Depp S. W., 1980, International Electron Devices Meeting. Technical Digest, P703
[7] GRAIN-BOUNDARIES IN P-N-JUNCTION DIODES FABRICATED IN LASER-RECRYSTALLIZED SILICON THIN-FILMS
JOHNSON, NM
BIEGELSEN, DK
MOYER, MD
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 900 - 902
[8] FIELD-EFFECTS IN POLYCRYSTALLINE-SILICON FILMS
KAMINS, TI
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (07) : 789 - &
[9] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON
LEE, KF
GIBBONS, JF
SARASWAT, KC
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 173 - 175
[10] CONDUCTIVITY BEHAVIOR IN POLYCRYSTALLINE SEMICONDUCTOR THIN-FILM TRANSISTORS
LEVINSON, J
SHEPHERD, FR
SCANLON, PJ
WESTWOOD, WD
ESTE, G
RIDER, M
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1193 - 1202

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