FIELD-EFFECT IN LARGE GRAIN POLYCRYSTALLINE SILICON

被引：35

作者：

COLINGE, JP ^{[1
]}

MOREL, H ^{[1
]}

CHANTE, JP ^{[1
]}

机构：

[1] ECOLE CENT LYON, F-69130 ECULLY, FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 03期

关键词：

D O I：

10.1109/T-ED.1983.21099

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：197 / 201

页数：5

共 13 条

[1] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

BACCARANI, G ;

RICCO, B ;

SPADINI, G .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5565-5570

[2] GRAIN-SIZE AND RESISTIVITY OF LPCVD POLYCRYSTALLINE SILICON FILMS [J].

COLINGE, JP ;

DEMOULIN, E ;

DELANNAY, F ;

LOBET, M ;

TEMERSON, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) :2009-2014

[3] USE OF SELECTIVE ANNEALING FOR GROWING VERY LARGE GRAIN SILICON ON INSULATOR FILMS [J].

COLINGE, JP ;

DEMOULIN, E ;

BENSAHEL, D ;

AUVERT, G .

APPLIED PHYSICS LETTERS, 1982, 41 (04) :346-347

[4] STACKED TRANSISTORS CMOS (ST-MOS), AN NMOS TECHNOLOGY MODIFIED TO CMOS [J].

COLINGE, JP ;

DEMOULIN, E ;

LOBET, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :585-589

[5]

COLINGE JP, 1982, SPR P ECS M MONTR, P238

[6]

Depp S. W., 1980, International Electron Devices Meeting. Technical Digest, P703

[7] GRAIN-BOUNDARIES IN P-N-JUNCTION DIODES FABRICATED IN LASER-RECRYSTALLIZED SILICON THIN-FILMS [J].

JOHNSON, NM ;

BIEGELSEN, DK ;

MOYER, MD .

APPLIED PHYSICS LETTERS, 1981, 38 (11) :900-902

[8] FIELD-EFFECTS IN POLYCRYSTALLINE-SILICON FILMS [J].

KAMINS, TI .

SOLID-STATE ELECTRONICS, 1972, 15 (07) :789-&

[9] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON [J].

LEE, KF ;

GIBBONS, JF ;

SARASWAT, KC .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :173-175

[10] CONDUCTIVITY BEHAVIOR IN POLYCRYSTALLINE SEMICONDUCTOR THIN-FILM TRANSISTORS [J].

LEVINSON, J ;

SHEPHERD, FR ;

SCANLON, PJ ;

WESTWOOD, WD ;

ESTE, G ;

RIDER, M .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1193-1202

← 1 2 →