ATOMIC LAYER EPITAXY GROWN HETEROJUNCTION BIPOLAR-TRANSISTOR HAVING A CARBON-DOPED BASE

被引：33
作者：
BHAT, R
HAYES, JR
COLAS, E
ESAGUI, R
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 09期
关键词：
D O I：
10.1109/55.6939
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：442 / 443
页数：2
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