X-RAY-LITHOGRAPHY FOR SUB-100-NM-CHANNEL-LENGTH TRANSISTORS USING MASKS FABRICATED WITH CONVENTIONAL PHOTOLITHOGRAPHY, ANISOTROPIC ETCHING, AND OBLIQUE SHADOWING

被引：13
作者：
CHOU, SY [1 ]
SMITH, HI [1 ]
ANTONIADIS, DA [1 ]
机构：
[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 06期
关键词：
D O I：
10.1116/1.582943
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1587 / 1589
页数：3
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