MOLECULAR-BEAM EPITAXIAL-GROWTH AND INTERFACE CHARACTERISTICS OF GAASSB ON GAAS SUBSTRATES

被引：61
作者：
YANO, M
ASHIDA, M
KAWAGUCHI, A
IWAI, Y
INOUE, M
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期
关键词：
D O I：
10.1116/1.584716
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：199 / 203
页数：5
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