EFFECT OF SUBSTRATE-TEMPERATURE ON PROPERTIES OF GLOW-DISCHARGED HYDROGENATED AMORPHOUS-SILICON

被引：35
作者：
SHIRAFUJI, J
KUWAGAKI, M
SATO, T
INUISHI, Y
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 10期
关键词：
D O I：
10.1143/JJAP.23.1278
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1278 / 1286
页数：9
相关论文
共 32 条
[21]   ANOMALOUS TRANSIT-TIME DISPERSION IN AMORPHOUS SOLIDS [J].
SCHER, H ;
MONTROLL, EW .
PHYSICAL REVIEW B, 1975, 12 (06) :2455-2477
[22]   ZERO-BIAS RESISTANCE OF GRAIN-BOUNDARIES IN NEUTRON-TRANSMUTATION-DOPED POLYCRYSTALLINE SILICON [J].
SEAGER, CH ;
CASTNER, TG .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3879-3889
[23]   BONDING IN HYDROGENATED AMORPHOUS-SILICON [J].
SHANKS, HR ;
JEFFREY, FR ;
LOWRY, ME .
JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :773-777
[24]   TIME-OF-FLIGHT MEASUREMENT OF UNDOPED GLOW-DISCHARGED A-SI-H [J].
SHIRAFUJI, J ;
MATSUI, H ;
INUISHI, Y ;
HAMAKAWA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (05) :775-779
[25]   MICROCRYSTALLINE FORMATION IN SPUTTERED A-SI-H-FILMS [J].
SHIRAFUJI, J ;
MATSUI, H ;
NARUKAWA, A ;
INUISHI, Y ;
TANAKA, N .
SOLID STATE COMMUNICATIONS, 1983, 45 (07) :577-580
[26]   SUBSTRATE-TEMPERATURE DEPENDENCE OF ELECTRON-DRIFT MOBILITY IN GLOW-DISCHARGED HYDROGENATED AMORPHOUS-SILICON [J].
SHIRAFUJI, J ;
KUWAGAKI, M ;
INUISHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03) :L184-L186
[27]   MORPHOLOGICAL FLUCTUATION AND ELECTRICAL-PROPERTIES OF SPUTTERED HYDROGENATED SILICON [J].
SHIRAFUJI, J ;
MATSUI, H ;
NARUKAWA, A ;
INUISHI, Y .
APPLIED PHYSICS LETTERS, 1982, 41 (06) :535-537
[28]   SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J].
SPEAR, WE ;
LECOMBER, PG .
SOLID STATE COMMUNICATIONS, 1975, 17 (09) :1193-1196
[29]   THE STUDY OF TRANSPORT AND RELATED PROPERTIES OF AMORPHOUS-SILICON BY TRANSIENT EXPERIMENTS [J].
SPEAR, WE .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :1-14
[30]   LUMINESCENCE AND RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON [J].
STREET, RA .
ADVANCES IN PHYSICS, 1981, 30 (05) :593-676
1234