PROBLEM OF GALVANOMAGNETIC EFFECTS IN LIGHTLY DOPED P-TYPE ZERO-GAP SEMICONDUCTOR HG1-XCDXTE

被引：0

作者：

GERMANENKO, AV

KRUZHAEV, VV

MINKOV, GM

RUT, OE

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1988年 / 22卷 / 06期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：626 / 629

页数：4

共 50 条

[41] Electron-positron annihilation in the narrow gap semiconductor Hg1-xCdxTe
Kokhanenko, AP
Korotaev, AG
Voitsekhovskii, AV
[J]. FIFTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS, 2001, 4355 : 173 - 177
[42] RESONANCES OF GALVANOMAGNETIC EFFECTS IN HG1-XCDXTE SUBJECTED TO STRONG ELECTRIC-FIELDS
YAKUNIN, MV
ARAPOV, YG
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (12): : 1363 - 1367
[43] TRANSPORT EFFECTS IN UNIAXIALLY DEFORMED P-TYPE HG1-XCDXTE WITH EG GREATER-THAN 0
GERMANENKO, AV
MINKOV, GM
RUMYANTSEV, EL
RUT, OE
INISHEVA, OV
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (05): : 500 - 505
[44] INFLUENCE OF DEEP LEVEL INTRINSIC DEFECTS ON THE CARRIER TRANSPORT IN P-TYPE HG1-XCDXTE
HOERSTEL, W
KLIMAKOW, A
KRAMER, R
[J]. JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) : 854 - 858
[45] NATIVE POINT-DEFECTS IN TE-RICH P-TYPE HG1-XCDXTE
WIENECKE, M
SCHENK, M
BERGER, H
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (02) : 299 - 302
[46] CONTROLLED P-TYPE SB DOPING IN LPE-GROWN HG1-XCDXTE EPILAYERS
HARMAN, TC
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (09) : 1165 - 1172
[47] ANOMALOUS ANISOTROPY OF THE MAGNETORESISTANCE OF ZERO-GAP P-TYPE HGMNTE
GLUZMAN, NG
DAVYDOV, AB
KRYLOV, KR
LERINMAN, NK
PONIKAROV, BB
PONOMAREV, AI
SABIRZYANOVA, LD
TSIDILKOVSKII, IM
SHELUSHININA, NG
GORBATYUK, IN
RARENKO, IM
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (11): : 1237 - 1242
[48] GALVANOMAGNETIC MEASUREMENTS AT HYDROSTATIC PRESSURE ON HG1-XCDXTE ALLOYS NEAR SEMIMETAL-SEMICONDUCTOR TRANSITION
ELLIOTT, CT
MELNGAIL.J
HARMAN, TC
KAFALAS, JA
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (03): : 401 - &
[49] SIZE QUANTIZATION IN ACCUMULATION LAYERS IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES MADE OF ZERO-GAP HG1-XCDXTE - OSCILLATIONS OF THE CAPACITANCE IN QUANTIZING MAGNETIC-FIELDS
DERYABINA, TI
ZVEREV, LP
RADANTSEV, VF
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (11): : 1319 - 1320
[50] INFLUENCE OF HEAVY-HOLE SCATTERING ON THE MAGNETOTRANSPORT BEHAVIOR OF P-TYPE ZERO-GAP HG1-XMNXTE
ZHENG, GZ
SHEN, JX
GUO, SL
TANG, DY
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (01) : S165 - S167

← 1 2 3 4 5 →