PROBLEM OF GALVANOMAGNETIC EFFECTS IN LIGHTLY DOPED P-TYPE ZERO-GAP SEMICONDUCTOR HG1-XCDXTE

被引：0
作者：
GERMANENKO, AV
KRUZHAEV, VV
MINKOV, GM
RUT, OE
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1988年 / 22卷 / 06期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：626 / 629
页数：4
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