PROBLEM OF GALVANOMAGNETIC EFFECTS IN LIGHTLY DOPED P-TYPE ZERO-GAP SEMICONDUCTOR HG1-XCDXTE

被引：0

作者：

GERMANENKO, AV

KRUZHAEV, VV

MINKOV, GM

RUT, OE

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1988年 / 22卷 / 06期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：626 / 629

页数：4

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