共 50 条
- [2] DETERMINATION OF DIFFUSION LENGTH OF MINORITY CARRIERS IN ELECTRON-BEAM-EXCITED N-TYPE GAAS PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 4 (01): : 249 - +
- [5] INFLUENCE OF COMPENSATION ON RADIATIVE RECOMBINATION IN N-TYPE AND P-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (07): : 1089 - +
- [7] Radiative recombination in n-type and p-type GaAs compensated with Li Journal of Applied Physics, 1993, 74 (12):
- [8] RADIATIVE RECOMBINATION IN GASB EXCITED WITH AN ELECTRON BEAM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (01): : 134 - +
- [10] REABSORBED RECOMBINATION RADIATION AND ELECTRON-BEAM INDUCED BARRIER CURRENT IN N-TYPE GAAS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 104 (02): : 931 - 939