LOW-TEMPERATURE RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM AND SILICON

被引:69
作者
BROWN, RA
RODRIGUEZ, S
机构
来源
PHYSICAL REVIEW | 1967年 / 153卷 / 03期
关键词
D O I
10.1103/PhysRev.153.890
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:890 / +
页数:1
相关论文
共 22 条
[1]   RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM [J].
ASCARELLI, G ;
BROWN, SC .
PHYSICAL REVIEW, 1960, 120 (05) :1615-1626
[2]   RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM [J].
ASCARELLI, G ;
RODRIGUEZ, S .
PHYSICAL REVIEW, 1961, 124 (05) :1321-&
[3]   RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM. B [J].
ASCARELLI, G ;
RODRIGUEZ, S .
PHYSICAL REVIEW, 1962, 127 (01) :167-&
[4]   PIEZORESISTANCE AND PIEZO-HALL-EFFECT IN N-TYPE SILICON [J].
AUBREY, JE ;
GUBLER, W ;
HENNINGSEN, T ;
KOENIG, SH .
PHYSICAL REVIEW, 1963, 130 (05) :1667-+
[5]   REMARKS ON RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM [J].
BELEZNAY, F ;
PATAKI, G .
PHYSICA STATUS SOLIDI, 1966, 13 (02) :499-&
[6]  
BROWN R, 1964, B AM PHYS SOC 2, V9, P62
[7]   EFFECT OF IMPURITY CONDUCTION ON ELECTRON RECOMBINATION IN GERMANIUM AND SILICON AT LOW TEMPERATURES [J].
BROWN, RA .
PHYSICAL REVIEW, 1966, 148 (02) :974-&
[8]  
BROWN RA, 1964, THESIS PURDUE U
[9]   THERMAL CAPTURE OF ELECTRONS IN SILICON [J].
GUMMEL, H .
ANNALS OF PHYSICS, 1957, 2 (01) :28-56
[10]   CASCADE CAPTURE OF ELECTRONS BY IONIZED IMPURITIES [J].
HAMANN, DR ;
MCWHORTER, AL .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (1A) :A250-&