RECOMBINATION LUMINESCENCE FROM ION-IMPLANTED SILICON

被引：75

作者：

KIRKPATRICK, CG

NOONAN, JR

STREETMAN, BG

机构：

[1] UNIV ILLINOIS,COORD SCI LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1976年 / 30卷 / 02期

关键词：

D O I：

10.1080/00337577608233525

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：97 / 106

页数：10

共 29 条

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[6]

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[8] PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN P-TYPE SILICON - BORON INTERSTITIAL AND ALUMINUM INTERSTITIAL DEFECTS [J].

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[9]

CORBETT JW, 1966, ELECTRON RADIATION D

[10] LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON [J].

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APPLIED PHYSICS LETTERS, 1970, 16 (08) :313-+

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