STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5

被引:157
作者
KERR, DR
LOGAN, JS
BURKHARDT, PJ
PLISKIN, WA
机构
关键词
D O I
10.1147/rd.84.0376
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
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页码:376 / &
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共 20 条
[1]   STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J].
ATALLA, MM ;
TANNENBAUM, E ;
SCHEIBNER, EJ .
BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03) :749-783
[2]   SOLID LOGIC TECHNOLOGY - VERSATILE HIGH-PERFORMANCE MICROELECTRONICS [J].
DAVIS, EM ;
HARDING, WE ;
SCHWARTZ, RS ;
CORNING, JJ .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) :102-&
[3]  
DONOVAN RP, 1963, SEPT EL SOC M
[4]  
FEUERSANGER AE, 1963, IEEE T ELECTRON DEVI, VED10, P143
[5]  
HARDING WE, UNPUBLISHED WORK
[6]   GETTERING OF METALLIC IMPURITIES FROM PLANAR SILICON DIODES [J].
ING, SW ;
MORRISON, RE ;
ALT, LL ;
ALDRICH, RW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) :533-537
[7]   EFFECT OF TEMPERATURE + BIAS ON GLASS-SILICON INTERFACES [J].
KERR, DR .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :385-&
[8]  
LANGDON JL, 1961, HERMETICALLY SEALED
[9]   SEMICONDUCTOR SURFACE VARACTOR [J].
LINDNER, R .
BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (03) :803-+
[10]  
MILLER WB, PRIVATE COMMUNICATIO