STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[2] SOLID LOGIC TECHNOLOGY - VERSATILE HIGH-PERFORMANCE MICROELECTRONICS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 102 - &

[3] DONOVAN RP, 1963, SEPT EL SOC M

[4] FEUERSANGER AE, 1963, IEEE T ELECTRON DEVI, VED10, P143

[5] HARDING WE, UNPUBLISHED WORK

[6] GETTERING OF METALLIC IMPURITIES FROM PLANAR SILICON DIODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 533 - 537

[7] EFFECT OF TEMPERATURE + BIAS ON GLASS-SILICON INTERFACES [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 385 - &

[8] LANGDON JL, 1961, HERMETICALLY SEALED

[9] SEMICONDUCTOR SURFACE VARACTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (03): : 803 - +

[10] MILLER WB, PRIVATE COMMUNICATIO

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[2] SOLID LOGIC TECHNOLOGY - VERSATILE HIGH-PERFORMANCE MICROELECTRONICS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 102 - &

[3] DONOVAN RP, 1963, SEPT EL SOC M

[4] FEUERSANGER AE, 1963, IEEE T ELECTRON DEVI, VED10, P143

[5] HARDING WE, UNPUBLISHED WORK

[6] GETTERING OF METALLIC IMPURITIES FROM PLANAR SILICON DIODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 533 - 537

[7] EFFECT OF TEMPERATURE + BIAS ON GLASS-SILICON INTERFACES [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 385 - &

[8] LANGDON JL, 1961, HERMETICALLY SEALED

[9] SEMICONDUCTOR SURFACE VARACTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (03): : 803 - +

[10] MILLER WB, PRIVATE COMMUNICATIO