DOSE DEPENDENCE OF THE FLASH LAMP ANNEALING OF ARSENIC-IMPLANTED SILICON

被引：6
作者：
PANKNIN, D
WIESER, E
KLABES, R
SYHRE, H
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 77卷 / 02期
关键词：
D O I：
10.1002/pssa.2210770219
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：553 / 559
页数：7
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