INITIAL-STAGE OF CU GROWTH ON SI(111)7X7 SURFACE STUDIED BY SCANNING-TUNNELING-MICROSCOPY

被引:35
作者
YASUE, T [1 ]
KOSHIKAWA, T [1 ]
TANAKA, H [1 ]
SUMITA, I [1 ]
机构
[1] MATSUSHITA RES INST TOKYO,TAMA,KAWASAKI 214,JAPAN
关键词
D O I
10.1016/0039-6028(93)91120-E
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The initial stage of growth of Cu on Si(111)7 x 7 surface at room temperature is observed with a field ion-scanning tunneling microscope (FI-STM). Cu atoms adsorb on adatoms, especially center adatoms, as well as on rest atoms and some Cu atoms form small clusters at very low coverage. At submonolayer coverage triangular clusters lay on the center of sub-units of the DAS structure. At a higher coverage, nearly circular shaped islands are observed, which is a different shape than those observed by others.
引用
收藏
页码:1025 / 1029
页数:5
相关论文
共 19 条
[1]   ATOM-RESOLVED SURFACE-CHEMISTRY STUDIED BY SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY [J].
AVOURIS, P ;
WOLKOW, R .
PHYSICAL REVIEW B, 1989, 39 (08) :5091-5100
[2]   7X7 SI(111)-CU INTERFACES - COMBINED LEED, AES AND EELS MEASUREMENTS [J].
DAUGY, E ;
MATHIEZ, P ;
SALVAN, F ;
LAYET, JM .
SURFACE SCIENCE, 1985, 154 (01) :267-283
[3]   SUBMONOLAYER PHASES OF PB ON SI(111) [J].
GANZ, E ;
XIONG, FL ;
HWANG, IS ;
GOLOVCHENKO, J .
PHYSICAL REVIEW B, 1991, 43 (09) :7316-7319
[4]   SURFACE ELECTRONIC-STRUCTURE OF SI(111)-(7 X 7) RESOLVED IN REAL SPACE [J].
HAMERS, RJ ;
TROMP, RM ;
DEMUTH, JE .
PHYSICAL REVIEW LETTERS, 1986, 56 (18) :1972-1975
[5]   CHEMICAL BONDING AND ELECTRONIC-STRUCTURE OF PD2SI [J].
HO, PS ;
RUBLOFF, GW ;
LEWIS, JE ;
MORUZZI, VL ;
WILLIAMS, AR .
PHYSICAL REVIEW B, 1980, 22 (10) :4784-4790
[6]   ISS AES STUDY OF THE INITIAL GROWTH STAGE OF CU THIN-FILMS ON SI(111)-7X7 [J].
KATAYAMA, I ;
HANAWA, T ;
SHOJI, F ;
OURA, K .
APPLIED SURFACE SCIENCE, 1991, 48-9 :361-365
[7]   AES, LEED AND TDS STUDIES OF CU ON SI(111)7X7 AND SI(100)2X1 [J].
KEMMANN, H ;
MULLER, F ;
NEDDERMEYER, H .
SURFACE SCIENCE, 1987, 192 (01) :11-26
[8]   SURFACE RECONSTRUCTION AND THE NUCLEATION OF PALLADIUM SILICIDE ON SI(111) [J].
KOHLER, UK ;
DEMUTH, JE ;
HAMERS, RJ .
PHYSICAL REVIEW LETTERS, 1988, 60 (24) :2499-2502
[9]   FORMATION AND PROPERTIES OF THE COPPER SILICON (111) INTERFACE [J].
RINGEISEN, F ;
DERRIEN, J ;
DAUGY, E ;
LAYET, JM ;
MATHIEZ, P ;
SALVAN, F .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :546-552
[10]   COMPOUND FORMATION AND BONDING CONFIGURATION AT THE SI-CU INTERFACE [J].
ROSSI, G ;
LINDAU, I .
PHYSICAL REVIEW B, 1983, 28 (06) :3597-3600