RADIATIVELY CONTROLLED LIFETIMES IN ALXGA1-XAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：1

作者：

THOMEER, RAJ

HAGEMAN, PR

GILING, LJ

机构：

[1] Department of Experimental Solid State Physics, RIM Faculty of Science, University of Nijmegen, 6525 ED Nijmegen, Toernooiveld

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 12期

关键词：

D O I：

10.1063/1.111865

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report long minority charge carrier lifetimes in AlxGa1-xAs/AlyGa1-yAs x<y) double heterostructures grown by metalorganic vapor phase epitaxy. The lifetime (tau(bulk)=8.8 mus) is found to be controlled by radiative processes in samples with aluminum concentrations of x=0.10 for the active regime and y=0.20 for the cladding layers; an extremely low interface recombination velocity of S congruent-to 6.5 cm/s is found. At higher aluminum concentrations both the bulk and interface recombination rate increase rapidly.

引用

页码：1561 / 1562

页数：2

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