METALLIC IMPURITY CONDUCTION IN DOPED SEMICONDUCTORS

被引：0

作者：

OOTUKA, Y ^{[1
]}

KAWABATA, A ^{[1
]}

机构：

[1] GAKUSHUIN UNIV, DEPT PHYS, TOKYO 171, JAPAN

来源：

SUPPLEMENT OF THE PROGRESS OF THEORETICAL PHYSICS | 1985年 / 84期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：249 / 268

页数：20

共 50 条

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[50] IMPURITY BAND-STRUCTURE IN LIGHTLY DOPED SEMICONDUCTORS
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