INVESTIGATIONS OF WELL DEFINED DISLOCATIONS IN SILICON

被引:42
作者
ALEXANDER, H
KISIELOWSKIKEMMERICH, C
WEBER, ER
机构
来源
PHYSICA B & C | 1983年 / 116卷 / 1-3期
关键词
D O I
10.1016/0378-4363(83)90311-X
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:583 / 593
页数:11
相关论文
共 32 条
[1]  
ABE T, 1981, SEMICONDUCTOR SILICO, P54
[2]   TEM OF DISLOCATIONS UNDER HIGH STRESS IN GERMANIUM AND DOPED SILICON [J].
ALEXANDER, H ;
EPPENSTEIN, H ;
GOTTSCHALK, H ;
WENDLER, S .
JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (JAN) :13-21
[3]  
ALEXANDER H, 1978, J PHYSIQUE, V39, P114
[4]   ON THE REAL STRUCTURE OF MONOCRYSTALLINE SILICON NEAR DISLOCATION SLIP PLANES [J].
BONDARENKO, IE ;
EREMENKO, VG ;
FARBER, BY ;
NIKITENKO, VI ;
YAKIMOV, EB .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 68 (01) :53-60
[5]  
DROZDOV NA, 1976, JETP LETT+, V23, P597
[6]   PHOTO-EPR OF DISLOCATIONS IN SILICON [J].
ERDMANN, R ;
ALEXANDER, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (01) :251-259
[7]   RECOMBINATION AT DISLOCATIONS [J].
FIGIELSKI, T .
SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1403-1412
[8]   VELOCITIES OF SCREW AND 60-DEGREES DISLOCATIONS IN N-TYPE AND P-TYPE SILICON [J].
GEORGE, A ;
CHAMPIER, G .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 53 (02) :529-540
[9]   MEANING OF DISLOCATION VELOCITIES MEASURED IN DOPED SILICON [J].
GEORGE, A ;
CHAMPIER, G .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 29 (01) :K79-K82
[10]  
GEORGE A, 1972, PHYS STATUS SOLIDI B, V53, P483, DOI 10.1002/pssb.2220530209