CDTE-GAAS(100) INTERFACE - MBE GROWTH, RHEED AND XPS CHARACTERIZATION

被引：103
作者：
FAURIE, JP
HSU, C
SIVANANTHAN, S
CHU, X
机构：
来源：
SURFACE SCIENCE | 1986年 / 168卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(86)90877-0
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：473 / 482
页数：10
相关论文
共 17 条
[1]   GROWTH OF (100) CDTE-FILMS OF HIGH STRUCTURAL PERFECTION ON (100) GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].
BICKNELL, RN ;
YANKA, RW ;
GILES, NC ;
SCHETZINA, JF ;
MAGEE, TJ ;
LEUNG, C ;
KAWAYOSHI, H .
APPLIED PHYSICS LETTERS, 1984, 44 (03) :313-315
[2]   RECENT PROGRESS ON LADA GROWTH OF HGCDTE AND CDTE EPITAXIAL LAYERS [J].
CHEUNG, JT ;
MAGEE, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1983, 1 (03) :1604-1607
[3]   BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001) [J].
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :2841-2843
[4]   MBE GROWTH OF (HG, CD, AND TE) COMPOUNDS [J].
CHOW, PP ;
GREENLAW, DK ;
JOHNSON, D .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :562-563
[5]   X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS (001) SURFACE THERMOCLEANING PRIOR TO MOLECULAR-BEAM EPITAXY [J].
CONTOUR, JP ;
MASSIES, J ;
SALETES, A ;
STAIB, P .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 38 (01) :45-47
[6]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH STRUCTURAL PERFECTION, HETERO-EPITAXIAL CDTE-FILMS ON INSB (001) [J].
FARROW, RFC ;
JONES, GR ;
WILLIAMS, GM ;
YOUNG, IM .
APPLIED PHYSICS LETTERS, 1981, 39 (12) :954-956
[7]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY HGTE AND HG1-XCDXTE ONTO GAAS (001) SUBSTRATES [J].
FAURIE, JP ;
SIVANANTHAN, S ;
BOUKERCHE, M ;
RENO, J .
APPLIED PHYSICS LETTERS, 1984, 45 (12) :1307-1309
[8]  
FAURIE JP, 1982, UNPUB 3RD INT C SOL
[9]  
FAURIE JP, J VACUUM SCI TECHNOL
[10]   HIGH-PERFORMANCE PHOTOVOLTAIC INFRARED DEVICES IN HG1-XCDXTE ON GAAS [J].
GERTNER, ER ;
SHIN, SH ;
EDWALL, DD ;
BUBULAC, LO ;
LO, DS ;
TENNANT, WE .
APPLIED PHYSICS LETTERS, 1985, 46 (09) :851-853
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