RECONSTRUCTION AND ENERGETICS FOR SURFACES OF SILICON, DIAMOND AND BETA-SIC

被引:81
作者
TAKAI, T
HALICIOGLU, T
TILLER, WA
机构
关键词
D O I
10.1016/0039-6028(85)90751-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
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页码:341 / 352
页数:12
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共 36 条
[1]   CLEAVED SI(111) SURFACES - GEOMETRICAL AND ANNEALING BEHAVIOR [J].
AUER, PP ;
MONCH, W .
SURFACE SCIENCE, 1979, 80 (01) :45-55
[2]  
CARDILLO MJ, 1985, SPRINGER SERIES CHEM, V20, P149
[3]   STRUCTURE DETERMINATION FOR THE (110) SURFACE OF ZINCBLENDE STRUCTURE COMPOUND SEMICONDUCTORS [J].
DUKE, CB ;
MEYER, RJ ;
PATON, A ;
MARK, P ;
KAHN, A ;
SO, E ;
YEH, JL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1252-1257
[4]  
EASTMAN DE, 1980, J VAC SCI TECHNOL, V17, P492, DOI 10.1116/1.570492
[5]   LOW-ENERGY ELECTRON-DIFFRACTION FROM SI(111)-2 X 1 - THEORY AND EXPERIMENT [J].
FEDER, R ;
MONCH, W ;
AUER, PP .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (05) :L179-L184
[6]   THE STRUCTURE AND CHEMISTRY OF CRYSTAL-SURFACES [J].
FORTY, AJ .
CONTEMPORARY PHYSICS, 1983, 24 (03) :271-299
[7]   DIRECT MEASUREMENTS OF THE SURFACE ENERGIES OF CRYSTALS [J].
GILMAN, JJ .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) :2208-2218
[8]   MULTILAYER RELAXATION CALCULATIONS FOR LOW INDEX PLANES OF AN FCC CRYSTAL [J].
HALICIOGLU, T ;
PAMUK, HO ;
ERKOC, S .
SURFACE SCIENCE, 1984, 143 (2-3) :601-608
[9]   SEMICONDUCTOR SURFACES [J].
HANEMAN, D .
ADVANCES IN PHYSICS, 1982, 31 (03) :165-194
[10]   SURFACE STRUCTURES AND PROPERTIES OF DIAMOND-STRUCTURE SEMICONDUCTORS [J].
HANEMAN, D .
PHYSICAL REVIEW, 1961, 121 (04) :1093-&