ACTIVATION OF GERMANIUM ACCEPTORS DURING SICL4 REACTIVE-ION ETCHING OF MOCVD GAAS EPITAXIAL LAYERS

被引：0

作者：

WEBER, J

SAWYER, WD

HARRIS, CI

机构：

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1990年 / 106期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：263 / 266

页数：4

共 10 条

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LOW TS, 1983, I PHYS C SER, V65, P515

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1982, LANDOLTBORSTEIN, V111

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