IMPROVING THE RADIATION BURN-OUT SUSCEPTIBILITY OF N-CHANNEL POWER MOSFETS

被引：14

作者：

KESHAVARZ, AA ^{[1
]}

FISCHER, TA ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1992年 / 39卷 / 06期

关键词：

D O I：

10.1109/23.211389

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Computer simulation was used to calculate the dose-rate thresholds of several different power MOSFET structures. Computational results indicate that significant improvements in radiation tolerance and burnout of the device are possible by reducing the lateral size of the power MOSFET unit cell, or by using a lower emitter injection efficiency for the bipolar structure. Modification of some other factors, such as the base minority carrier lifetime or the epi/substrate interface shape, shows some minor improvements in device radiation tolerance.

引用

页码：1943 / 1946

页数：4

共 6 条

[1] BAMBI - A DESIGN-MODEL FOR POWER MOSFETS [J].